BJT
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- DIP Transistors, Discrete Electronic Components, Transistors
2SC828 NPN Transistor
- Type: NPN
- Collector-Emitter Voltage (Vceo): 25V
- Collector Current (Ic): 0.2A
- Collector-Base Voltage (Vcbo): 30V
- Emitter-Base Voltage: 7V
- Collector Current: 0.05A
- Power Dissipation (Ptot): 500mW
- Collector Dissipation: 0.4W
- DC Current Gain (hfe): 130
- Collector Current-Max (IC): 0.0500 A
- Current-Gain-Bandwidth (ftotal): 220MHz
- Noise Figure: 6dB
- Operating and Storage Junction Temperature Range: -55 to +15°C
- Package: TO-92
SKU: 0876
