High power
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- Discrete Electronic Components, FET’s & MOSFET’s, Transistors
IRFZ24N 17A 55V N-Channel Power MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.028 Ohm
- Continuous Drain Current: 17 A
- Total Gate Charge: 67 nC
- Power Dissipation: 82 W
- Package: TO-220AB
SKU: 1681 - Motor and Gears, Robotics & Machines
JGB37-550 DC 12V 160RPM High Torque Metal Gear DC Motor
DC 12V 160 RPM Slow Speed High Torque Geared DC Motor has stable and reliable performance along with high torque and low noise. This motor is low-speed and high-power, and is generally powered by a lithium battery. The motor generates a low RPM which is very ideal for making gripper to pick and place heavy objects with greater accuracy.
SKU: 1197 - Discrete Electronic Components, Surface Mount Transistors, Transistors
MJE13003 Power Switch Transistor NPN SMD SOT-252
Discrete Electronic Components, Surface Mount Transistors, TransistorsMJE13003 Power Switch Transistor NPN SMD SOT-252
- Product Category: Bipolar Transistors – BJT
- Mounting Style: SOT-252
- Package/Case: SOT-252
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 400 V
- Collector- Base Voltage VCBO: 100 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 0.5 V
- Maximum DC Collector Current: 1.5 A
- Pd – Power Dissipation: 1.4 W
- Gain Bandwidth Product fT: 3 MHz
- Minimum Operating Temperature: – 65 C
- Maximum Operating Temperature: + 150 C
- Continuous Collector Current: 1.5 A
- DC Collector/Base Gain hFE Min: 8
- Product Type: BJTs – Bipolar Transistors
- Subcategory: Transistors
SKU: 0446
