n-channel
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- Discrete Electronic Components, FET’s & MOSFET’s, Transistors
IRFZ24N 17A 55V N-Channel Power MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.028 Ohm
- Continuous Drain Current: 17 A
- Total Gate Charge: 67 nC
- Power Dissipation: 82 W
- Package: TO-220AB
SKU: 1681 - Discrete Electronic Components, FET’s & MOSFET’s, Transistors
IRFP3205 IRF3205 N-Channel FET MOSFET
Family IRF3205 Category Power MOSFET Configuration Single Maximum Continuous Forward Current 110A Maximum Power Dissipation 200000mW Number of Elements per Chip 1 Peak Forward Voltage 55VDC Output Power 200W Peak Non-Repetitive Surge Current 390A Peak Reverse Current 25uA Channel Mode N-Channel Enhancement Peak Reverse Recovery Time 101ns Channel Type N Peak Reverse Repetitive Voltage 55VDC Maximum Continuous Drain Current 110A Maximum Drain Source Resistance 0.008 Ohms@10V Maximum Drain Source Voltage 55V Maximum Gate Source Voltage ±20V Typical Fall Time 65ns Typical Gate Charge @ Vgs 146nC @10V Typical Input Capacitance @ Vds 3247pF@25V Typical Rise Time 101ns Typical Turn-Off Delay Time 50ns Typical Turn-On Delay Time 14ns Minimum Operating Temperature -55°C Maximum Operating Temperature 175°C Mounting Through Hole Packaging Bulk Pin_Count 3 Supplier Package TO-220AB Product Width 4.69mm Product Height 8.77mm Product Length 10.54mm Product Type MOSFET SKU: 0854
