NPN
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- Modules and Breakout Boards, Proximity/Distance Sensors, Sensors & Transducers
Proximity Switch SN04-N NPN Metal Detection Sensor for Metal Inspection
Modules and Breakout Boards, Proximity/Distance Sensors, Sensors & TransducersProximity Switch SN04-N NPN Metal Detection Sensor for Metal Inspection
This inductive proximity sensor will detect the presence of a metallic object within 5mm of the surface of the sensor. The detection distance may vary slightly depending on the shape, size, and type of metal the object is made of. It can detect through thin, non-metallic materials and has an LED indicator that turns on when the device is powered, and increases in brightness when an object is detected.
SKU: 1162 - DIP Transistors, Discrete Electronic Components, Transistors
2SC828 NPN Transistor
- Type: NPN
- Collector-Emitter Voltage (Vceo): 25V
- Collector Current (Ic): 0.2A
- Collector-Base Voltage (Vcbo): 30V
- Emitter-Base Voltage: 7V
- Collector Current: 0.05A
- Power Dissipation (Ptot): 500mW
- Collector Dissipation: 0.4W
- DC Current Gain (hfe): 130
- Collector Current-Max (IC): 0.0500 A
- Current-Gain-Bandwidth (ftotal): 220MHz
- Noise Figure: 6dB
- Operating and Storage Junction Temperature Range: -55 to +15°C
- Package: TO-92
SKU: 0876 - Discrete Electronic Components, Surface Mount Transistors, Transistors
S8050 MMBT8050 J3Y NPN Silicon Transistor SMD SOT23 Triode
Discrete Electronic Components, Surface Mount Transistors, TransistorsS8050 MMBT8050 J3Y NPN Silicon Transistor SMD SOT23 Triode
- Type Designator: S8050 J3Y
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 150 MHz
- Forward Current Transfer Ratio (hFE), MIN: 120
- Package: SOT23
SKU: 0574 - DIP Transistors, Discrete Electronic Components, Transistors
BD137 1.5 A 60V NPN Bipolar Power Transistor
DIP Transistors, Discrete Electronic Components, TransistorsBD137 1.5 A 60V NPN Bipolar Power Transistor
- Type – NPN
- Collector-Emitter Voltage: 60 V
- Collector-Base Voltage: 60 V
- Emitter-Base Voltage: 5 V
- Collector Current: 1.5 A
- Collector Dissipation – 12.5 W
- DC Current Gain (hfe) – 40 to 250
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-126
SKU: 0447 - DIP Transistors, Discrete Electronic Components, Transistors
TIP41C 100V 6A NPN General Purpose Power Silicon Transistor(Original)
DIP Transistors, Discrete Electronic Components, TransistorsTIP41C 100V 6A NPN General Purpose Power Silicon Transistor(Original)
- NPN medium power transistor
- Collector-Emitter Saturation Voltage – VCE(sat) = 1.5 V
- Collector-Emitter voltage = 40V
- I C min: 0.5A
- I C max: 6A
- I C peak max: 10 A (t p <5ms)
- I B max: 3A
- P TOT : 65W
- V CEO : 100V, V CBO : 100V, V EBO : 5V
- h FE : 15 to 75 (@ I C = 3A, V CE = 4V )
- High suicheo speed
- Complementary: TIP42C
- Encapsulated: TO-220
SKU: 0226 - DIP Transistors, Discrete Electronic Components, Transistors
TIP31C Bipolar NPN Transistor 100V 3A TO-220
-11%
DIP Transistors, Discrete Electronic Components, TransistorsTIP31C Bipolar NPN Transistor 100V 3A TO-220
The TIP31C is a standard NPN bipolar junction transistor that is often used for medium power
applications. A bipolar junction transistor (BJT) is a three terminal device that is allows for
amplification or switching applications. BJTs consists of three differently doped semiconductor regions,
the collector region, the base region, and the emitter region. TIP31C TRANSISTOR has many replacements like TIP31A, 2N6122, TIP31B, MJE340K, SW4F013. To buy online in Pakistan visit electrobes.com.SKU: 0561 - DIP Transistors, Discrete Electronic Components, Transistors
S8050 NPN Transistor
- Low Voltage, High Current NPN Transistor
- Small Signal Transistor
- Maximum Power: 2 Watts
- Maximum DC Current Gain (hFE) is 400
- Continuous Collector current (IC) is 700mA
- Base- Emitter Voltage (VBE) is 5V
- Collector-Emitter Voltage (VCE) is 20V
- Collector-Base Voltage (VCB) is 30V
- High Used in push-pull configuration doe Class B amplifiers
SKU: 0453
