Silicon
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- DIP Transistors, Discrete Electronic Components, Transistors
2SC828 NPN Transistor
- Type: NPN
- Collector-Emitter Voltage (Vceo): 25V
- Collector Current (Ic): 0.2A
- Collector-Base Voltage (Vcbo): 30V
- Emitter-Base Voltage: 7V
- Collector Current: 0.05A
- Power Dissipation (Ptot): 500mW
- Collector Dissipation: 0.4W
- DC Current Gain (hfe): 130
- Collector Current-Max (IC): 0.0500 A
- Current-Gain-Bandwidth (ftotal): 220MHz
- Noise Figure: 6dB
- Operating and Storage Junction Temperature Range: -55 to +15°C
- Package: TO-92
SKU: 0876 - Diodes, Discrete Electronic Components
27V SMD Zener Diode 5% 300 mW SOD-323
Nominal Zener Voltage 27V Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surface Mount Maximum Power Dissipation 400 mW Package Type SOD-323 Zener Type Voltage Regulator Zener Voltage Tolerance 2% Pin Count 2 Test Current 5mA Maximum Reverse Leakage Current 50nA Length 1.8mm Dimensions 1.8 x 1.35 x 1.05mm Width 1.35mm Maximum Operating Temperature +150 °C Height 1.05mm Typical Voltage Temperature Coefficient - 23.4mV/K
SKU: 0862 - DIP Transistors, Discrete Electronic Components, Transistors
TIP41C 100V 6A NPN General Purpose Power Silicon Transistor(Original)
DIP Transistors, Discrete Electronic Components, TransistorsTIP41C 100V 6A NPN General Purpose Power Silicon Transistor(Original)
- NPN medium power transistor
- Collector-Emitter Saturation Voltage – VCE(sat) = 1.5 V
- Collector-Emitter voltage = 40V
- I C min: 0.5A
- I C max: 6A
- I C peak max: 10 A (t p <5ms)
- I B max: 3A
- P TOT : 65W
- V CEO : 100V, V CBO : 100V, V EBO : 5V
- h FE : 15 to 75 (@ I C = 3A, V CE = 4V )
- High suicheo speed
- Complementary: TIP42C
- Encapsulated: TO-220
SKU: 0226
