IRFZ24N 17A 55V N-Channel Power MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.028 Ohm
- Continuous Drain Current: 17 A
- Total Gate Charge: 67 nC
- Power Dissipation: 82 W
- Package: TO-220AB
Only 3 left in stock
₨ 60
Only 3 left in stock
IRFZ24N 17A 55V N-Channel Power MOSFET
IRFZ24N 17A 55V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRFZ24 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRFZ24 Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Type Designator: IRFZ24
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRFZ24 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 17 | 60 | 60 | 0.1 | 10 |
Application
- Switching Applications
You can download this datasheet for IRFZ24N 17A 55V N-Channel Power MOSFET from the link given below:
- Id (A): 17
- Pd (W): 60
- Vds (max): 60
- Rds (on): 0.1
- Vgs (max): 10
