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MJE13003 Power Switch Transistor NPN SMD SOT-252

  • Product Category: Bipolar Transistors – BJT
  • Mounting Style: SOT-252
  • Package/Case: SOT-252
  • Transistor Polarity: NPN
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 400 V
  • Collector- Base Voltage VCBO: 100 V
  • Emitter- Base Voltage VEBO: 5 V
  • Collector-Emitter Saturation Voltage: 0.5 V
  • Maximum DC Collector Current: 1.5 A
  • Pd – Power Dissipation: 1.4 W
  • Gain Bandwidth Product fT: 3 MHz
  • Minimum Operating Temperature: – 65 C
  • Maximum Operating Temperature: + 150 C
  • Continuous Collector Current: 1.5 A
  • DC Collector/Base Gain hFE Min: 8
  • Product Type: BJTs – Bipolar Transistors
  • Subcategory: Transistors
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Availability:

Only 7 left in stock

 60

Only 7 left in stock

These Power 2 A, 400 V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Features:

  • Reverse Biased SOA with Inductive Loads @ TC = 100? C
  • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100 ° C
    tc @ 1 A, 100 ° C is 290 ns (Typ)
  • 700 V Blocking Capability
  • SOA and Switching Applications Information.
  • Pb-Free Package is Available
  • Technical Documentation & Design