Transistors Categories
Transistors
Showing the single result
-
DIP Transistors, Discrete Electronic Components, Transistors
TIP32C Bipolar PNP Transistor 100V 3A TO-220
-11%
DIP Transistors, Discrete Electronic Components, TransistorsTIP32C Bipolar PNP Transistor 100V 3A TO-220
The TIP32C is a standard PNP bipolar junction transistor that is often used for medium power applications. A bipolar junction transistor (BJT) is a three terminal device that is allows for amplification or switching applications. BJTs consists of three differently doped semiconductor regions, the collector region, the base region, and the emitter region. To buy online in Pakistan visit electrobes-com-827299.hostingersite.com
SKU: 0240 -
Discrete Electronic Components, FET’s & MOSFET’s, Transistors
IRFZ24N 17A 55V N-Channel Power MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 0.028 Ohm
- Continuous Drain Current: 17 A
- Total Gate Charge: 67 nC
- Power Dissipation: 82 W
- Package: TO-220AB
SKU: 1681 -
-
DIP Transistors, Discrete Electronic Components, Transistors
2SC828 NPN Transistor
- Type: NPN
- Collector-Emitter Voltage (Vceo): 25V
- Collector Current (Ic): 0.2A
- Collector-Base Voltage (Vcbo): 30V
- Emitter-Base Voltage: 7V
- Collector Current: 0.05A
- Power Dissipation (Ptot): 500mW
- Collector Dissipation: 0.4W
- DC Current Gain (hfe): 130
- Collector Current-Max (IC): 0.0500 A
- Current-Gain-Bandwidth (ftotal): 220MHz
- Noise Figure: 6dB
- Operating and Storage Junction Temperature Range: -55 to +15°C
- Package: TO-92
SKU: 0876 -
Discrete Electronic Components, Surface Mount Transistors, Transistors
S8050 MMBT8050 J3Y NPN Silicon Transistor SMD SOT23 Triode
Discrete Electronic Components, Surface Mount Transistors, TransistorsS8050 MMBT8050 J3Y NPN Silicon Transistor SMD SOT23 Triode
- Type Designator: S8050 J3Y
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 150 MHz
- Forward Current Transfer Ratio (hFE), MIN: 120
- Package: SOT23
SKU: 0574 -
Discrete Electronic Components, Surface Mount Transistors, Transistors
SS8550 MMBT8550 Y2 PNP SMD Transistor SOT-23 High Current
Discrete Electronic Components, Surface Mount Transistors, TransistorsSS8550 MMBT8550 Y2 PNP SMD Transistor SOT-23 High Current
- Type Designator: SS8550
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 1 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Collector Current |Ic max|: 1.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 100 MHz
- Forward Current Transfer Ratio (hFE), MIN: 85
- Package: SOT-23
SKU: 0573 -
Discrete Electronic Components, Surface Mount Transistors, Transistors
MJE13003 Power Switch Transistor NPN SMD SOT-252
Discrete Electronic Components, Surface Mount Transistors, TransistorsMJE13003 Power Switch Transistor NPN SMD SOT-252
- Product Category: Bipolar Transistors – BJT
- Mounting Style: SOT-252
- Package/Case: SOT-252
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 400 V
- Collector- Base Voltage VCBO: 100 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 0.5 V
- Maximum DC Collector Current: 1.5 A
- Pd – Power Dissipation: 1.4 W
- Gain Bandwidth Product fT: 3 MHz
- Minimum Operating Temperature: – 65 C
- Maximum Operating Temperature: + 150 C
- Continuous Collector Current: 1.5 A
- DC Collector/Base Gain hFE Min: 8
- Product Type: BJTs – Bipolar Transistors
- Subcategory: Transistors
SKU: 0446 -
DIP Transistors, Discrete Electronic Components, Transistors
BD137 1.5 A 60V NPN Bipolar Power Transistor
DIP Transistors, Discrete Electronic Components, TransistorsBD137 1.5 A 60V NPN Bipolar Power Transistor
- Type – NPN
- Collector-Emitter Voltage: 60 V
- Collector-Base Voltage: 60 V
- Emitter-Base Voltage: 5 V
- Collector Current: 1.5 A
- Collector Dissipation – 12.5 W
- DC Current Gain (hfe) – 40 to 250
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-126
SKU: 0447 -
DIP Transistors, Discrete Electronic Components, Transistors
TIP41C 100V 6A NPN General Purpose Power Silicon Transistor(Original)
DIP Transistors, Discrete Electronic Components, TransistorsTIP41C 100V 6A NPN General Purpose Power Silicon Transistor(Original)
- NPN medium power transistor
- Collector-Emitter Saturation Voltage – VCE(sat) = 1.5 V
- Collector-Emitter voltage = 40V
- I C min: 0.5A
- I C max: 6A
- I C peak max: 10 A (t p <5ms)
- I B max: 3A
- P TOT : 65W
- V CEO : 100V, V CBO : 100V, V EBO : 5V
- h FE : 15 to 75 (@ I C = 3A, V CE = 4V )
- High suicheo speed
- Complementary: TIP42C
- Encapsulated: TO-220
SKU: 0226 -
-
DIP Transistors, Discrete Electronic Components, Transistors
BT136 BT-136 TRIAC 600E Switching Transistor
DIP Transistors, Discrete Electronic Components, TransistorsBT136 BT-136 TRIAC 600E Switching Transistor
The BT136 is a four-quadrant TRIAC from NXP that can handle medium power switching of loads up to 600V and 16A. With the ability to work in four quadrants, it can switch both positive and negative currents and operate with a positive or negative gate current.
SKU: 0239 -
DIP Transistors, Discrete Electronic Components, Transistors
BT139 600E Triac Switching Transistor
- Direct triggering from low power drivers and logic ICs
- High blocking voltage capability
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate
- Triggering in all four quadrants
SKU: 0237 -
Discrete Electronic Components, FET’s & MOSFET’s, Transistors
IRFP3205 IRF3205 N-Channel FET MOSFET
Family IRF3205 Category Power MOSFET Configuration Single Maximum Continuous Forward Current 110A Maximum Power Dissipation 200000mW Number of Elements per Chip 1 Peak Forward Voltage 55VDC Output Power 200W Peak Non-Repetitive Surge Current 390A Peak Reverse Current 25uA Channel Mode N-Channel Enhancement Peak Reverse Recovery Time 101ns Channel Type N Peak Reverse Repetitive Voltage 55VDC Maximum Continuous Drain Current 110A Maximum Drain Source Resistance 0.008 Ohms@10V Maximum Drain Source Voltage 55V Maximum Gate Source Voltage ±20V Typical Fall Time 65ns Typical Gate Charge @ Vgs 146nC @10V Typical Input Capacitance @ Vds 3247pF@25V Typical Rise Time 101ns Typical Turn-Off Delay Time 50ns Typical Turn-On Delay Time 14ns Minimum Operating Temperature -55°C Maximum Operating Temperature 175°C Mounting Through Hole Packaging Bulk Pin_Count 3 Supplier Package TO-220AB Product Width 4.69mm Product Height 8.77mm Product Length 10.54mm Product Type MOSFET SKU: 0854 -
DIP Transistors, Discrete Electronic Components, Transistors
TIP31C Bipolar NPN Transistor 100V 3A TO-220
-11%
DIP Transistors, Discrete Electronic Components, TransistorsTIP31C Bipolar NPN Transistor 100V 3A TO-220
The TIP31C is a standard NPN bipolar junction transistor that is often used for medium power
applications. A bipolar junction transistor (BJT) is a three terminal device that is allows for
amplification or switching applications. BJTs consists of three differently doped semiconductor regions,
the collector region, the base region, and the emitter region. TIP31C TRANSISTOR has many replacements like TIP31A, 2N6122, TIP31B, MJE340K, SW4F013. To buy online in Pakistan visit electrobes-com-827299.hostingersite.com.SKU: 0561 -
DIP Transistors, Discrete Electronic Components, Transistors
TIP42C Bipolar PNP Transistor
Power Transistors are transistors which can handle a lot more power in compared to BJTs. Similar to BJTs, the current flow between the collector and the emitter of is controlled by the current flow through the base. TIP42C is a PNP type semiconductor Bipolar high power Transistor. Collector-base voltage of 40V and Collector current of 6A. This type of semi-conductors are available online in Pakistan at electrobes.
SKU: 0557 -
-
DIP Transistors, Discrete Electronic Components, Transistors
BC516 PNP Darlington Transistor
- Type – PNP
- Collector-Emitter Voltage: -30 V
- Collector-Base Voltage: -40 V
- Emitter-Base Voltage: -10 V
- Collector Current: -1 A
- Collector Dissipation – 0.625 W
- DC Current Gain (hfe) – 30000
- Transition Frequency – 200 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-92
SKU: 0457 -
-
DIP Transistors, Discrete Electronic Components, Transistors
S8050 NPN Transistor
- Low Voltage, High Current NPN Transistor
- Small Signal Transistor
- Maximum Power: 2 Watts
- Maximum DC Current Gain (hFE) is 400
- Continuous Collector current (IC) is 700mA
- Base- Emitter Voltage (VBE) is 5V
- Collector-Emitter Voltage (VCE) is 20V
- Collector-Base Voltage (VCB) is 30V
- High Used in push-pull configuration doe Class B amplifiers
SKU: 0453 -
DIP Transistors, Discrete Electronic Components, Transistors
2N2222 NPN Transistor
- Bi-Polar high current NPN Transistor
- DC Current Gain (hFE) is 100
- Continuous Collector current (IC) is 800mA
- Emitter Base Voltage (VBE) is 6V
- Collector Emitter Voltage (VCE) is 30V
- Base Current(IB) is 5mA maximum
SKU: 0452
