IRS2011 IR2011 High Voltage High Speed Power MOSFET Driver IGBT driver IC

Features:

• Floating channel designed for bootstrap operation
• Fully operational up to +200 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Independent low-side and high-side channels
• Input logic HIN/LIN active high
• Under-voltage lockout for both channels
• 3.3 V and 5 V input logic compatible
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels

Applications:

• Audio Class D amplifiers
• High power DC-DC SMPS converters
• DC motor drive
• UPS inverters